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FS13MR12W2M1HB70BPSA1

Manufacturer
Infineon
Mfr. Part #
FS13MR12W2M1HB70BPSA1
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
FS13MR12W2M1HB70BPSA1
Description
1.2kV 62.5A (Tc)
Stock Info
Packaging
Tray
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Infineon

Specifications

Configuration6 N-Channel (3-Phase Bridge)
Current - Continuous Drain (Id) @ 25°c62.5A (Tc)
Drain To Source Voltage (Vdss)1.2kV
Gate Charge (Qg) (Max) @ Vgs200nC @ 18V
Input Capacitance (Ciss) (Max) @ Vds6050pF @ 800V
Rds On (Max) @ Id, Vgs11.7mOhm @ 62.5A, 18V
SeriesCoolSiC™
TechnologySilicon Carbide (SiC)
Vgs(th) (Max) @ Id5.15V @ 28mA