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2N7000

Manufacturer
On Semi
Mfr. Part #
2N7000
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
2N7000
Description
N-Channel 60V 350mA (Tc) 1W (Tc) Through Hole TO-226-3
Stock Info
Packaging
Bulk Pack
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by On Semi

Specifications

Current - Continuous Drain (Id) @ 25°c200mA (Ta)
Drain To Source Voltage (Vdss)60V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Fet Feature-
Fet TypeN-Channel
Input Capacitance (Ciss) (Max) @ Vds50 pF @ 25 V
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
PackageBulk
Package / CaseTO-226-3
Power Dissipation (Max)400mW (Ta)
Product StatusActive
Rds On (Max) @ Id, Vgs5Ohm @ 500mA, 10V
Rohs StatusROHS3 Compliant
Series-
Standard Package10,000
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 1mA