Part Image
Image is for Reference Only

FGY100T120RWD

Manufacturer
On Semi
Mfr. Part #
FGY100T120RWD
Category
IGBT- Insulated Gate Bipolar Transistors
SKU
FGY100T120RWD
Description
IGBT Field Stop 1200V 200A 1495 W Through Hole TO-247-3
Stock Info
Packaging
Tube
View All IGBT- Insulated Gate Bipolar Transistors by On Semi

Specifications

Current - Collector (Ic) (Max)200A
Current - Collector Pulsed (Icm)300 A
Gate Charge427 nC
Igbt TypeField Stop
Input TypeStandard
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
PackageTube
Package / CaseTO-247-3 Variant
Power - Max1495 W
Product StatusActive
Reverse Recovery Time (Trr)347 ns
Rohs StatusROHS3 Compliant
Standard Package450
Switching Energy8.13mJ (on), 7.05mJ (off)
Td (On/off) @ 25°c80ns/364ns
Test Condition600V, 100A, 4.7Ohm, 15V
Vce(on) (Max) @ Vge, Ic1.75V @ 15V, 100A
Voltage - Collector Emitter Breakdown (Max)1200V