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TSM210NH08LDCR RLG

Manufacturer
Taiwan Semiconductor
Mfr. Part #
TSM210NH08LDCR RLG
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
TSM210NH08LDCR RLG
Description
80V 8.2A (Ta), 33A (Tc) Surface Mount, Wettable Flank 8-PowerTDFN
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Taiwan Semiconductor

Specifications

Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°c8.2A (Ta), 33A (Tc)
Drain To Source Voltage (Vdss)80V
Gate Charge (Qg) (Max) @ Vgs11nC @ 10V
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds639pF @ 40V
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
Package / Case8-PowerTDFN
Power - Max48W (Tc)
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs21mOhm @ 16.5A, 10V
SeriesPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 250µA