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TSM250NH10DCR RLG

Manufacturer
Taiwan Semiconductor
Mfr. Part #
TSM250NH10DCR RLG
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
TSM250NH10DCR RLG
Description
100V 7.4A (Ta), 31A (Tc) Surface Mount, Wettable Flank 8-PowerTDFN
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Taiwan Semiconductor

Specifications

Current - Continuous Drain (Id) @ 25°c7.4A (Ta), 31A (Tc)
Drain To Source Voltage (Vdss)100V
Gate Charge (Qg) (Max) @ Vgs8.4nC @ 10V
GradeAutomotive
Input Capacitance (Ciss) (Max) @ Vds513pF @ 60V
Mounting TypeSurface Mount, Wettable Flank
Operating Temperature-55°C ~ 175°C (TJ)
Package / Case8-PowerTDFN
Power - Max54W (Tc)
QualificationAEC-Q101
Rds On (Max) @ Id, Vgs25mOhm @ 15.5A, 10V
SeriesPerFET™
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id3.6V @ 250µA