Part Image
Image is for Reference Only

TSM300NB06DCR RLG

Manufacturer
Taiwan Semiconductor
Mfr. Part #
TSM300NB06DCR RLG
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
TSM300NB06DCR RLG
Description
2 N-Channel (Dual) 60V 6A (Ta), 25A (Tc) Surface Mount 8-PowerTDFN
Stock Info
Packaging
Reel
Std Package Qty
2500
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Taiwan Semiconductor
Truspilot
Trustpilot Stars  4.9
Available Quantity : 9946
100% Purchase Protection
Original Products | Secure Payments

Specifications

Current - Continuous Drain (Id) @ 25°c6A (Ta), 25A (Tc)
Drain To Source Voltage (Vdss)60V
Fet FeatureStandard
Fet Type2 N-Channel (Dual)
Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds1079pF @ 30V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR)
Package / Case8-PowerTDFN
Power - Max2W (Ta), 40W (Tc)
Rds On (Max) @ Id, Vgs30mOhm @ 6A, 10V
Rohs StatusROHS3 Compliant
Series-
Standard Package2,500
Vgs(th) (Max) @ Id4.5V @ 250µA