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SI4410BDY-T1-GE3

Manufacturer
Mfr. Part #
SI4410BDY-T1-GE3
SKU
SI4410BDY-T1-GE3
Description
TRANSISTOR,MOSFET,N-CHANNEL,30V V(BR)DSS,7.5A I(D),SO
Stock Info
Packaging
Reel
Available Quantity : 961
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Specifications

Current - Continuous Drain (Id) @ 25°c7.5A (Ta)
Drain To Source Voltage (Vdss)30V
Drive Voltage (Max Rds On, Min Rds On)10V
Fet TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs20 nC @ 5 V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case8-SOIC
Power Dissipation (Max)1.4W (Ta)
Rds On (Max) @ Id, Vgs13.5mOhm @ 10A, 10V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs (Max)±20V
Vgs(th) (Max) @ Id3V @ 250µA