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SI4952DY-T1-GE3

Manufacturer
Vishay
Mfr. Part #
SI4952DY-T1-GE3
Category
MOSFET- Metal Oxide Semiconductor Field Effect Transistors
SKU
SI4952DY-T1-GE3
Description
25V 8A Surface Mount 8-SOIC
Stock Info
Packaging
Reel
View All MOSFET- Metal Oxide Semiconductor Field Effect Transistors by Vishay
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Specifications

Configuration2 N-Channel (Dual)
Current - Continuous Drain (Id) @ 25°c8A
Drain To Source Voltage (Vdss)25V
Fet FeatureLogic Level Gate
Gate Charge (Qg) (Max) @ Vgs18nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds680pF @ 13V
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Package / Case8-SOIC
Power - Max2.8W
Rds On (Max) @ Id, Vgs23mOhm @ 7A, 10V
SeriesTrenchFET®
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.2V @ 250µA